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Flash Memory

Flash memory is a type of solid-state, non-volatile electronic memory storage medium designed to erase and program data and is EEPROM (Electronically Erasable Programmable Read-Only Memory) at the byte level regardless of power source. These storage devices are primarily found in a wide variety of devices such as USB sticks, SD cards, and other specialised industrial uses. The data storage capacity of a flash device is measured in MB or Mbit.

How Do They Work?

Flash memory integrated circuits store data with or without power by retaining electricity’s small parts between the integral transistors. Memory flash stores its data with no power source, unlike RAM, which loses the data without a power supply. 

What are the Types of Flash Memory Devices?

SD flash, micro SD, and compact flash are the common types of flash memory. Of these, memory cards and USB drivers are the most commonly used flash memory devices for various applications.

  • Flash memory cards: These are efficient transferable and removable memory storage devices designed to enhance the desired device’s memory capacity. They come in various dimensions and types. 
  • Flash memory USB Drives: These are external, easily removable devices used in various smart TVs and PCs and plugged into flash memory sticks.

Is There any Difference Between NOR Flash Memory and NAND?

  • NOR: The NOR flash memory is more efficient with high-speed data storage capabilities. These memory types are ideal for general-purpose data storage use in various mobile devices that can hold a large number of codes. Furthermore, these flash memories feature a larger memory cell size. However, they are under-ranked than NAND due to their slow write, erase, and scaling capabilities. 
  • NAND: NAND, a short term for “NOT AND”, is a flash memory that offers repeatable erasing and rewriting functions slightly lower than NOR and is ideal for a flash drive for data storage, music, and digital videos. Furthermore, they feature high storage capacity, are cheaper, and are ideal for use in smartphones, cameras, and USB sticks. 

For How Long Does Flash Memory Store the Data?

The data storage time entirely depends on the conditions of use. However, these storage devices cannot store data for long periods of time. So, it is crucial to back up the vital data to other devices, as most of these devices can hold data for ten years on average.

What are the Uses of Flash Memory?

These memory ICs have a wide variety of applications in scientific, smart portable devices, medical, and industrial environments. The following are some of the devices where flash memory is used.

  • Digital cameras
  • Mobile phones
  • PCs and laptops
  • Smart TVs
  • Security systems
  • GPS systems
  • SSD drives
  • Military applications
  • Communications and networking
  • Retail management.

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SST39VF3201B-70-4C-EKE, Microchip
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SST25VF016B-50-4I-S2AF-T, Microchip
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Alliance Memory
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ASFC4G31M-51BIN, Alliance Memory
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ASFC8G31M-51BIN, Alliance Memory
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S25FL256SAGNFI001, Infineon
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2701801, Phoenix Contact
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W29N04GVBIAF, Winbond
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S25FL128LAGMFI001, Infineon
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S29AL008J70TFI010, Infineon
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W25Q128JVFIQ, Winbond
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S29JL064J55TFI000, Cypress Semiconductor
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VA001-16G, Okdo

VA001-16G, Okdo

16GB Plug on eMMC 5.1 flash storage module for ROCK single board computers. Benefits of the eMMC flash storage module for ROCK Ideal memory solution for ROCK single board computers - eMMC modules benefit from fast speeds and supreme power efficiency. It’s the perfect memory and storage solution for a huge range of electronics. Not just for ROCK - This eMMC 5.1 module is optimised for use with ROCK single board computers, but it is also compatible with ODroid, and PINE. A memory size to suit you - We also offer eMMC 5.1 modules in 32GB, 64GB, or 128GB.
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S29AL008J70TFI010, Cypress Semiconductor

S29AL008J70TFI010, Cypress Semiconductor

Parallel NOR Flash Memory, Cypress Semiconductor High performance Fast random-access and high bandwidth Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S26HS512TGABHI010, Cypress Semiconductor

S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
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S25HS512TFABHI010, Infineon

S25HS512TFABHI010, Infineon

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
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S29GL256S10TFIV20, Infineon

S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm
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S25FL256SAGBHBA00, Infineon

S25FL256SAGBHBA00, Infineon

This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
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S25FL256SAGBHI300, Infineon

S25FL256SAGBHI300, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. It is ideal for code shadowing, XIP, and data storage. Executing code directly from flash memory is often called execute in Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. Advanced sector protection CMOS 3.0 V core with versatile I/O Minimum 20 year data retention Minimum 100000 program erase cycles SPI clock polarity and phase modes 0 and 3
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S29GL064S70TFI070, Infineon

S29GL064S70TFI070, Infineon

The Infineon Flash Memory offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM, executing code directly and storing re programmable data. Double data rate option Quad peripheral interface option Minimum 20 year data retention Serial peripheral interface with multi IO Minimum 100000 program erase cycles Clock polarity and phase modes 0 and 3
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SST26VF020A-104I/SN, Microchip

SST26VF020A-104I/SN, Microchip

The Microchip serial quad I/O (SQI) flash device utilizes a 4-bit multiplexed I/O serial interface to boost performance while maintaining the compact form factor of standard serial flash devices. It also supports full command-set compatibility to traditional serial peripheral interface (SPI) protocol. Operating at frequencies reaching 104 MHz, the SST26VF020A enables minimum latency execute-in-place (XIP) capability without the need for code shadowing on an SRAM. The device’s high performance and reliability make it the ideal choice for network appliance, smart home, wireless connectivity, computing, digital TV, smart meter, datacentre, automotive and other industrial applications. Further benefits are achieved with SST’s proprietary, high-performance CMOS Super flash® technology, which significantly improves performance and reliability, and lowers power consumption for high bandwidth, compact designs. x1/x2/x4 Serial Peripheral Interface (SPI) Protocol and SQI protocol Burst Modes- Continuous linear burst, 8/16/32/64 Byte linear burst with wrap-around Page-Program- 256 Bytes per page in x1 or x4 mode SFDP (Serial flash Discoverable Parameters) RoHS compliant -40°C to +85°C industrial temperature range
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SST26VF016B-104V/SN, Microchip

SST26VF016B-104V/SN, Microchip

SST26VF016B/032B/064B Serial Quad I/O (SQI) SuperFlash® Memory The SST26VF016B/032B/064B family of devices from Microchip are Serial Quad I/O™ (SQI™) interface SuperFlash® memory ICs featuring a six-wire, 4-bit I/O interface that allow for low power, high performance operation in a compact low pin-count package. The use of Microchip’s SQI™ interface results in performance of up to 104 MHz and enables low-latency execute-in-place (XIP) capability with minimal processor buffer memory. These flash memory chips also support full command-set compatibility to traditional Serial Peripheral Interface (SPI) protocol. Through the use of SuperFlash® technology these devices offer exceptional erase times that compare very favourably to other Flash memory alternatives. Sector and block erase commands are typically completed in 18 ms, full chip erase operation taking a typical 35 ms. Features Serial Interface Architecture – Nibble-Wide Multiplexed I/O’s with SPI-like Serial Command Structure x1/x2/x4 Serial Peripheral Interface (SPI) Protocol High Speed Clock Frequency- 104 MHz Max Burst Modes Low Power Consumption – Active Read 15 mA (Typical at 104 MHz), Standby 15 μA (Typical) Fast Erase Time - Sector/Block Erase: 18 ms (Typical); Chip Erase 35 ms (Typical) Flexible Erase Capability Software Write Protection Flash Memory, Microchip
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ML22120TBZ0B-MX, ROHM

ML22120TBZ0B-MX, ROHM

The ROHM External Memory Type is a speech synthesis LSI suitable for Acoustic Vehicle Alerting System (AVAS) and sounds outside the vehicle. It is equipped with functions for adjusting playback sounds such as vehicle proximity alert sounds. By changing the pitch and volume of the playback sound, it is possible to comply with the legal requirements for vehicle proximity alert sounds, making it easy to realize vehicle proximity alert sounds. An equalizer function is also provided to simplify sound adjustment after installation in the vehicle and for each vehicle. Failure detection function included Detects abnormalities in communication with the main microcontroller Identifies issues with the external oscillator Ensures safe and reliable use
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