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Flash Memory

Flash memory is a type of solid-state, non-volatile electronic memory storage medium designed to erase and program data and is EEPROM (Electronically Erasable Programmable Read-Only Memory) at the byte level regardless of power source. These storage devices are primarily found in a wide variety of devices such as USB sticks, SD cards, and other specialised industrial uses. The data storage capacity of a flash device is measured in MB or Mbit.

How Do They Work?

Flash memory integrated circuits store data with or without power by retaining electricity’s small parts between the integral transistors. Memory flash stores its data with no power source, unlike RAM, which loses the data without a power supply. 

What are the Types of Flash Memory Devices?

SD flash, micro SD, and compact flash are the common types of flash memory. Of these, memory cards and USB drivers are the most commonly used flash memory devices for various applications.

  • Flash memory cards: These are efficient transferable and removable memory storage devices designed to enhance the desired device’s memory capacity. They come in various dimensions and types. 
  • Flash memory USB Drives: These are external, easily removable devices used in various smart TVs and PCs and plugged into flash memory sticks.

Is There any Difference Between NOR Flash Memory and NAND?

  • NOR: The NOR flash memory is more efficient with high-speed data storage capabilities. These memory types are ideal for general-purpose data storage use in various mobile devices that can hold a large number of codes. Furthermore, these flash memories feature a larger memory cell size. However, they are under-ranked than NAND due to their slow write, erase, and scaling capabilities. 
  • NAND: NAND, a short term for “NOT AND”, is a flash memory that offers repeatable erasing and rewriting functions slightly lower than NOR and is ideal for a flash drive for data storage, music, and digital videos. Furthermore, they feature high storage capacity, are cheaper, and are ideal for use in smartphones, cameras, and USB sticks. 

For How Long Does Flash Memory Store the Data?

The data storage time entirely depends on the conditions of use. However, these storage devices cannot store data for long periods of time. So, it is crucial to back up the vital data to other devices, as most of these devices can hold data for ten years on average.

What are the Uses of Flash Memory?

These memory ICs have a wide variety of applications in scientific, smart portable devices, medical, and industrial environments. The following are some of the devices where flash memory is used.

  • Digital cameras
  • Mobile phones
  • PCs and laptops
  • Smart TVs
  • Security systems
  • GPS systems
  • SSD drives
  • Military applications
  • Communications and networking
  • Retail management.

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SST25VF016B-50-4I-QAF, Microchip
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£ 1.52
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SST25VF016B-50-4I-S2AF, Microchip
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£ 1.49
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Alliance Memory
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ASFC4G31M-51BIN, Alliance Memory
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Alliance Memory
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ASFC8G31M-51BIN, Alliance Memory
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S25FL128SAGNFI000, Infineon
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S25FL256SAGNFI001, Infineon
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S29AL008J70TFI010, Infineon
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SST26VF016B-104I/SN, Microchip
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SST25VF020B-80-4C-SAE, Microchip
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SST25PF040C-40I/MF, Microchip
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SST25VF080B-50-4I-S2AF, Microchip
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S29GL512S11TFI020, Infineon
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S25FL256SAGMFIG01, Infineon
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SST25VF040B-50-4I-S2AF, Microchip
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S25FL127SABMFI101, Infineon
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S70GL02GS11FHI010, Infineon
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S29GL128S90TFI010, Infineon
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EPC1441TC32N, Altera
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S29GL128P90TFIR20, Infineon
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S25FL064LABMFI010, Infineon
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S25FL128LAGNFI010, Infineon
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S25FL128SAGMFI001, Infineon
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S25FL256SAGMFI001, Infineon
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S29JL032J70TFI020, Infineon
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S70FL01GSAGMFI011, Infineon
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S29GL064N90TFI070, Cypress Semiconductor

S29GL064N90TFI070, Cypress Semiconductor

Flash Memory using MirrorBit Technology, Cypress Semiconductor (Spansion) Flash Memory FLASH Memory IC is a non-volatile RAM that has to be written/erased in blocks. It does have a limited life in terms of number of write cycles and tends to be used for program storage that is infrequently changed.
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S26HS512TGABHI010, Cypress Semiconductor

S26HS512TGABHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
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S25HS512TDPMHI010, Cypress Semiconductor

S25HS512TDPMHI010, Cypress Semiconductor

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
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SST39SF040-55-4I-NHE, Microchip

SST39SF040-55-4I-NHE, Microchip

SST39SF010A/020A/040 Parallel SuperFlash® Memory The SST39SF010A/020A/040 family of devices from Microchip are Parallel multi-purpose SuperFlash® Memory ICs. Features 4.5-5.5V Read and Write Operations Endurance – 100,000 cycles (typical) Low Power Consumption - Active Current 10 mA, Standby Current 30 μA (typical values at 14 MHz) Sector-Erase Capability – Uniform 4 Kbyte sectors Read Access Time – 55 to 70 ns Sector-Erase Time 18 ms Chip-Erase Time: 70 ms (typical) Byte-Program Time – 14 μs (typical) Chip Rewrite Time – SST39SF010A 2 seconds, SST39SF020A 4 seconds, SST39SF040 8 seconds (typical values) Latched Address and Data Automatic Write Timing – Internal VPP Generation End-of-Write Detection – Toggle Bit – Data# Polling TTL I/O Compatibility JEDEC Standard– Flash EEPROM Pinouts and Command Sets Flash Memory, Microchip
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W25Q64JVZPIQ/TUBE, Winbond

W25Q64JVZPIQ/TUBE, Winbond

64M-bit Serial Flash Memory with uniform 4KB sectors and Dual/Quad SPI Single/Dual/Quad SPI operations Uniform 4KB erasable sectors & 32KB/64KB erasable blocks 32,768 pages (256 bytes), page program in 0.7mS (typ.) Continuous Read with 8/16/32/64 Byte Wrap Clock operation up to 104MHz (266/532MHz equivalent with Dual/Quad SPI) 2.7 to 3.6V power supply -40° to +85°C operating range Program/Erase Suspend/Resume, Suspend Status Bit Factory-programmed unique ID Electronic ID with Dual/Quad I/O, Hardware and software write protection for top or bottom blocks Volatile & Non-volatile Status Register Bits Lock-Down and OTP protection Serial Flash Discoverable Parameters(SFDP) 3X256byte Security Registers with OTP locks Complement Array Protection Bit Individual Block/Sector Write Protection Software Reset & Configurable hardware/RESET pin Programmable output driver strength
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SST39LF800A-55-4C-B3KE, Microchip

SST39LF800A-55-4C-B3KE, Microchip

SST39LF800A Parallel SuperFlash® Memory Flash Memory, Microchip
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S25HS512TFABHI010, Infineon

S25HS512TFABHI010, Infineon

Cypress NOR Flash Memory is a non-volatile storage solution that integrates safety features for automotive and industrial systems. Applications include automotive instrument clusters, advanced driver assistance systems (ADAS), and networking communications. EnduraFlex™ Architecture: Partition memory to provide up to 25-years data retention and 1+ million program/erase cycles endurance, JEDEC xSPI compatible, Data Integrity Check and Interface CRC Certificates: ISO 26262 ASIL B Compliant, ISO 26262 ASIL-D ready. FMEDA and safety manual Single error correction and double error detection (SECDED) SafeBoot
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S29GL256S10TFIV20, Infineon

S29GL256S10TFIV20, Infineon

CMOS 3.0 Volt Core with Versatile I/O 65 nm MirrorBit Eclipse Technology Single supply (VCC) for read / program / erase (2.7 V to 3.6 V) Versatile I/O Feature Wide I/O voltage range (VIO): 1.65 V to VCC ´ 16 data bus Asynchronous 32-byte Page read 512-byte Programming Buffer Programming in Page multiples, up to a maximum of 512 bytes Single word and multiple program on same word options Automatic Error Checking and Correction (ECC) internal hardware ECC with single bit error correction Sector Erase Uniform 128-kbyte sectors Suspend and Resume commands for Program and Erase operations Status Register, Data Polling, and Ready/Busy pin methods to determine device status Advanced Sector Protection (ASP) Volatile and non-volatile protection methods for each sector Separate 1024-byte One Time Program (OTP) array with two lockable regions Common Flash Interface (CFI) parameter table Temperature Range / Grade Industrial (-40°C to +85°C) Industrial Plus(-40°C to +105°C) 100,000 Program / Erase Cycles 20 Years Data Retention Packaging Options 56-pin TSOP 64-ball LAA Fortified BGA, 13 mm ´ 11 mm 64-ball LAE Fortified BGA, 9 mm ´ 9 mm 56-ball VBU Fortified BGA, 9 mm ´ 7 mm
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S25FL256SAGBHBA00, Infineon

S25FL256SAGBHBA00, Infineon

This family of devices connect to a host system via a SPI. Traditional SPI single bit serial input and output (Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit (Quad I/O or QIO) serial commands. This multiple width interface is called SPI Multi-I/O or MIO. In addition, the FL-S family adds support for DDR read commands for SIO, DIO, and QIO that transfer address and read data on both edges of the clock. The Eclipse architecture features a Page Programming Buffer that allows up to 128 words (256 bytes) or 256 words (512 bytes) to be programmed in one operation, resulting in faster effective programming and erase than prior generation SPI program or erase algorithms. Executing code directly from flash memory is often called Execute-In-Place or XIP. By using FL-S devices at the higher clock rates supported, with QIO or DDR-QIO commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR flash memories while reducing signal count dramatically. The S25FL128S and S25FL256S products offer high densities coupled with the flexibility and fast performance required by a variety of embedded applications. They are ideal for code shadowing, XIP, and data storage.
New items
S25FL064LABNFI010, Cypress Semiconductor

S25FL064LABNFI010, Cypress Semiconductor

The FL-L family connects to a host system via a Serial Peripheral Interface (SPI). Traditional SPI single bit serial input and output(Single I/O or SIO) is supported as well as optional two bit (Dual I/O or DIO) and four bit wide Quad I/O (QIO) and Quad Peripheral Interface (QPI) commands. In addition, there are Double Data Rate (DDR) read commands for QIO and QPI that transfer address and read data on both edges of the clock.The architecture features a Page Programming Buffer that allows up to 256 bytes to be programmed in one operation and providesindividual 4 KB sector, 32 KB half block sector, 64 KB block sector, or entire chip erase.By using FL-L family devices at the higher clock rates supported, with Quad commands, the instruction read transfer rate can match or exceed traditional parallel interface, asynchronous, NOR Flash memories, while reducing signal count dramatically.The FL-L family products offer high densities coupled with the flexibility and fast performance required by a variety of mobile or embedded applications. Provides an ideal storage solution for systems with limited space, signal connections and power. These memories offer flexibility and performance well beyond ordinary serial flash devices. They are ideal for code shadowing to RAM,executing code directly (XIP) and storing re-programmable data.
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