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IGBTs Of Potential Quality, Reliable, And Upgraded Versions Available Online

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HGTG30N60C3D, Fairchild Semiconductor

Discrete IGBTs, Fairchild Semiconductor IGBT Discretes & Modules, Fairchild Semiconductor The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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6MBP30XSD060-50-P, Fuji Electric

Fuji Electric has been developing IGBT modules designed to be used as switching elements for power converters of variable-speed drives for motors, uninterruptable power supplies, and more. IGBT has superior characteristics combining the high-speed switching performance of a power MOSEFT with the high-voltage/high-current handling capabilities of a bipolar transistor. Reduces power dissipation to contribute to energy saving Achieves equipment size reduction Contributes to improving equipment reliability IPM come equipped with control IC possessing IGBT drive circuits and protection circuits, and therefore, it is easy to design peripheral circuits and possible to ensure high system reliability. It is suitable for applications such as those utilizing AC servos, air conditioning equipment, and elevators. Small capacity IPM with a product line-up ranging from 15A to 30A/600V and V-IPM covering a capacity of up to 400A/600V and 200A/1200V are available. The IPM come equipped with overcurrent protection, short circuit protection, control power voltage drop protection, and overheating protection, while also outputting alarm signals. Low-Side Igbts Are Separate Emiitter Type Short Circuit Protection Temperature Sensor Output Functoin Under Voltage Protection Fault Signal Output Function Input Interface :TTL (3.3v/5V) Active High Logic

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RGTH00TS65GC11, ROHM

Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant

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RGTH40TK65GC11, ROHM

Low Collector-Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Pb-free Lead Plating, RoHS Compliant

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RGT16TM65DGC9, ROHM

RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. Low Collector - Emitter Saturation Voltage Low Switching Loss Short Circuit Withstand Time 5μs Built in Very Fast & Soft Recovery FRD (RFN - Series) Pb - free Lead Plating

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GT30J121(Q), Toshiba

IGBT Discretes, Toshiba IGBT Discretes & Modules, Toshiba The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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IRG4BC30FDPBF, Infineon

Co-Pack IGBT up to 20A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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FGW75N60HD, Fuji Electric

IGBT Discretes, Fuji Electric IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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FGH40N65UFDTU, onsemi

Discrete IGBTs, Fairchild Semiconductor

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SKM75GB12T4, Semikron

Dual IGBT Modules A range of SEMITOP® IGBT modules from Semikron incorporating two series-connected (half bridge) IGBT devices. The modules are available in a wide range of voltage and current ratings and are suitable for a variety of power switching applications such as AC inverter motor drives and Uninterruptible Power Supplies. Compact SEMITOP® package Suitable for switching frequencies up to 12kHz Insulated copper baseplate using Direct Bonded Copper technology IGBT Modules, Semikron The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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FF75R12RT4HOSA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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IKQ40N120CH3XKSA1, Infineon

Responding to the market requirement to accommodate ever increasing amounts of silicon in smaller, space saving packages, Infineon introduces the new package TO-247PLUS for 1200V IGBT. Higher current capability, improved thermal behaviour. The TO-247PLUS has the same outer dimensions as the industry standard TO-247, but due to the absence of the screw hole, allows up to 75A in 1200V co-packed with full rated 75A diode. High power density – up to 75 A 1200 V IGBT co-packed with 75 A diode in TO-247 footprint 20% lower R th(jh) compared to TO-247 3 pin Extended collector-emitter pin creepage of 4.25 mm Extended clip creepage due to fully encapsulated front side of the package Higher system power density – I c increase keeping the same system thermal performance Lower thermal resistance R th(jh) and improved by ∼15% heat dissipation capability of TO-247PLUS vs TO-247 Higher reliability, extended lifetime of the device

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