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Are your products IGBTs in stock?

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IGBTs Of Potential Quality, Reliable, And Upgraded Versions Available Online

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FGW75N60HD, Fuji Electric

IGBT Discretes, Fuji Electric IGBT Discretes & Modules, Fuji Electric The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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FGH40N65UFDTU, onsemi

Discrete IGBTs, Fairchild Semiconductor

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RGTH00TS65GC11, ROHM

Low Collector - Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Built in Very Fast & Soft Recovery FRD (RFN - Series)Pb - free Lead Plating, RoHS Compliant

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RGTH40TK65GC11, ROHM

Low Collector-Emitter Saturation Voltage High Speed Switching Low Switching Loss & Soft Switching Pb-free Lead Plating, RoHS Compliant

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RGT16TM65DGC9, ROHM

RGT16TM65D is a Field Stop Trench IGBT with low collector - emitter saturation voltage, suitable for General Inverter, UPS, Power Conditioner, Welder. Low Collector - Emitter Saturation Voltage Low Switching Loss Short Circuit Withstand Time 5μs Built in Very Fast & Soft Recovery FRD (RFN - Series) Pb - free Lead Plating

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GT30J121(Q), Toshiba

IGBT Discretes, Toshiba IGBT Discretes & Modules, Toshiba The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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IRG4BC30FDPBF, Infineon

Co-Pack IGBT up to 20A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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IRG4PH50UDPBF, Infineon

Co-Pack IGBT over 21A, Infineon Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses. IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations IGBT Transistors, International Rectifier International Rectifier offers an extensive IGBT (Insulated-Gate Bipolar Transistor) portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT dies designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) dies can be employed to eliminate bond wires and allow double-sided cooling for improved thermal performance, reliability and efficiency.

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SKM100GB12F4, Semikron

The Semikron SEMITRANS series IGBT module has 1200 v collector to emitter voltage. It is mainly used in UPS, electronic welders, inductive heating, switched mode power supplies. Increased power cycling capability Insulated copper baseplate using DBC technology (Direct Bonded Copper) For higher switching frequencies above 15kHz

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SKM400GAR12F4, Semikron

The Semikron SEMITRANS series IGBT module has 1200 v collector to emitter voltage. It is mainly used in DC/DC – converter, electronic welders, brake chopper, switched reluctance motor. Increased power cycling capability Insulated copper baseplate using DBC technology (Direct Bonded Copper) For higher switching frequencies above 15kHz

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IM323L6GXKMA1, Infineon

The Infineon CIPOS Tiny IM323 product group offers the chance for integrating various power and control components to increase reliability, optimize PCB size and system costs, it is designed to control three phase AC motors, the package concept is specially adapted to power application, which need good thermal conduction and electrical isolation, also EMI-save control and overload protection and the reverse conducting IGBTs are combined with an optimized SOI gate driver for excellent electrical performance. C5SOI 3-phase single gate driver Operating range of 1 to 20 kHz Maximum junction temperature 175°C for the RCD2 Short circuit capability minimum 3μs Full pack DIP 32.8 x 18.8 mm Pin compatible solution

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FF75R12RT4HOSA1, Infineon

IGBT Modules, Infineon The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V. The PrimePACK IGBTs can be found in Industrial, commercial, construction and agricultural vehicles. The N-Channel TRENCHSTOP TM and Fieldstop IGBT Modules are suitable for hard switching and soft switching applications such as Inverters, UPS and Industrial drives. Package styles include: 62mm Modules, EasyPACK, EconoPACK TM 2/EconoPACK TM 3/EconoPACK TM 4 IGBT Discretes & Modules, Infineon The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

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