IGBT Arrays

IGBT Arrays (Insulated Gate Bipolar Transistor Arrays) are critical components employed in modern power electronics, combining the high efficiency of a MOSFET with the low saturation voltage of a bipolar transistor. These arrays are designed to handle high voltages and currents, making them ideal for applications where switching speed and power management are crucial. IGBT Arrays are constructed using advanced semiconductor materials, including silicon and silicon carbide, which offer excellent thermal stability and high-speed switching capabilities. Their design allows for multiple IGBTs to be housed within a single package, simplifying circuit design and reducing the overall footprint. 

Popular Variants of IGBT Arrays

• Half-Bridge Arrays
• Full-Bridge Arrays
• Three-Phase Bridge Arrays

Salient Features Include

• High voltage and current handling capacity
• Fast switching speed
• Low on-state voltage drop
• Integrated gate driver circuits

What are the Possible Advantages of Using Our Innovative IGBT Arrays?

• Improved energy efficiency
• Reduced heat generation
• Compact and space-saving design
• Enhanced reliability and performance

Application Information

• Motor Control and Drives
• Inverters for Solar and Wind Energy Systems
• Electric Vehicle Powertrains
• Uninterruptible Power Supplies (UPS)
• Industrial Automation and Robotics