Emitter-Switched Bipolar Transistors

Emitter-switched bipolar Transistors (ESBTs) are a unique hybrid of bipolar junction transistors (BJTs) and MOSFETs designed to improve efficiency and performance in high-voltage switching applications. Primarily utilised in industries requiring high power and fast switching, such as power supplies and motor control, ESBTs offer low conduction losses and high-speed switching capabilities. The combination of the high-current carrying ability of BJTs with the high input impedance of MOSFETs allows ESBTs to work effectively in both continuous and switching modes. 

ESBTs switch electrical signals between the emitter and collector, controlled by the base voltage. The integration of a MOSFET controls the switching, while the BJT handles the current, resulting in efficient high-voltage operation.

Building Materials of Emitter-Switched Bipolar Transistors

• Silicon-based semiconductor
• Insulated-gate materials for the MOSFET

Check Out Our High-Performance Emitter-Switched Bipolar Transistors

• Single ESBT
• Dual ESBTs for parallel configurations

Crucial Features and Benefits of Emitter-Switched Bipolar Transistors

• Low conduction losses
• High voltage capability
• Fast switching speed
• High efficiency in high-power applications
• Energy-efficient power management
• Reliable performance under high-voltage
• Enhanced thermal stability

Wide Range of Applications 

• Power Supplies
• Motor Drives
• Renewable Energy Inverters
• Industrial Automation Systems
• Telecom Infrastructure