Transistor Type:
PNP
Dimensions:
10.53 x 4.83 x 15.75mm
Mounting Type:
Through Hole
Maximum Power Dissipation:
80 W
Maximum Collector Emitter Saturation Voltage:
5 V dc
Maximum Collector Emitter Voltage:
350 V dc
Maximum Base Emitter Saturation Voltage:
1.5 V dc
Maximum Operating Frequency:
1 kHz
Maximum Emitter Base Voltage:
6 V dc
Package Type:
TO-220
Number of Elements per Chip:
1
Maximum DC Collector Current:
8 (Continuous) A, 16 (Peak) A
Maximum Operating Temperature:
+150 °C
Pin Count:
3
Transistor Configuration:
Single
Manufacturer Standard Lead Time:
2 Weeks
Base Part Number:
MJE5850
Detailed Description:
Bipolar (BJT) Transistor PNP 300V 8A 80W Through Hole TO-220
Transistor Type:
PNP
Mounting Type:
Through Hole
Vce Saturation (Max) @ Ib, Ic:
5V @ 3A, 8A
Series:
SWITCHMODE™
Supplier Device Package:
TO-220
Voltage - Collector Emitter Breakdown (Max):
300V
Packaging:
Tube
Operating Temperature:
-65°C ~ 150°C (TJ)
Power - Max:
80W
Customer Reference:
Package / Case:
TO-220-3
Current - Collector (Ic) (Max):
8A
DC Current Gain (hFE) (Min) @ Ic, Vce:
5 @ 5A, 5V
Manufacturer:
ON Semiconductor
